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Vishay |
BCW60 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
Pin Configuration
1. Base 2. Emitter
3. Collector
Mounting Pad Layout
0.031 (0.8)
0.079 (2.0)
0.035 (0.9)
0.037 (0.95)
0.037 (0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Features
• NPN Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low
frequency applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary types, BCW61 Series PNP
transistors are recommended.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking
Code:
BCW60A = AA
BCW60B = AB
BCW60C = AC
BCW60D = AD
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage (VBE=0)
VCES
32
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC 100 mA
Peak Collector Current
ICM 200 mA
Base Current (DC)
IB 50 mA
Power Dissipation
Ptot 250 mW
Maximum Junction Temperature
Tj 150 °C
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
TS
RΘJA
–65 to +150
500(1)
°C
°C/W
Note:
(1) Mounted on FR-4 printed-ciruit board.
Document Number 88170
09-May-02
www.vishay.com
1
BCW60 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
TYP.
DC Current Gain
at VCE = 5V, IC = 10 µA
at VCE = 5V, IC = 10 µA
at VCE = 5V, IC = 10 µA
at VCE = 5V, IC = 10 µA
BCW60A
BCW60B
BCW60C
BCW60D
hFE
hFE
hFE
hFE
–
20
40
100
–
–
–
–
at VCE = 5V, IC = 2 mA
at VCE = 5V, IC = 2 mA
at VCE = 5V, IC = 2 mA
at VCE = 5V, IC = 2 mA
BCW60A
BCW60B
BCW60C
BCW60D
hFE
hFE
hFE
hFE
120
180
250
380
–
–
–
–
at VCE = 1V, IC = 50 mA
at VCE = 1V, IC = 50 mA
at VCE = 1V, IC = 50 mA
at VCE = 1V, IC = 50 mA
Collector-Emitter Saturation Voltage
at IC = 10 mA, IB = 0.25 mA
at IC = 50 mA, IB = 1.25 mA
Base-Emitter Saturation Voltage
at IC = 10 mA, IB = 0.25 mA
at IC = 50 mA, IB = 1.25 mA
BCW60A
BCW60B
BCW60C
BCW60D
hFE
hFE
hFE
hFE
VCEsat
VCEsat
VBEsat
VBEsat
50
70
90
100
50
100
600
700
–
–
–
–
–
–
–
–
Base-Emitter Voltage
at VCE = 5V, IC = 2 mA
at VCE = 5V, IC = 10 µA
at VCE = 1V, IC = 50 mA
Collector-Emitter Cut-off Current
at VCE = 32V, VBE = 0V
at VCE = 32V, VBE = 0V, TA = 150°C
Emitter-Base Cut-off Current
at VEB = 4V, IC = 0
Gain-Bandwidth Product
at VCE = 5V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance
at VCB = 10V, f = 1 MHZ, IE=0
Emitter-Base Capacitance
at VEB = 0.5V, f = 1 MHZ, IC=0
Noise Figure
at VCE = 5V, IC = 200 µA, RS = 2 kΩ, f = 1kHz, B = 200Hz
Small Signal Current Gain
at VCE = 5V, IC = 2 mA, f = 1.0 kHZ
BCW60A
BCW60B
BCW60C
BCW60D
Turn-on Time at RL = 990Ω (see fig. 1)
VCC = 10V, Ic = 10mA, IB(on) = –IB(off) = 1mA
Turn-off Time at RL = 990Ω (see fig. 1)
VCC = 10V, Ic = 10mA, IB(on) = –IB(off) = 1mA
VBE
VBE
VBE
ICES
IEBO
fT
CCBO
CEBO
F
hfe
ton
toff
550
–
–
–
–
–
100
–
–
–
–
–
–
–
–
–
650
520
780
–
–
–
250
2.5
8
2
200
260
330
520
85
480
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2
Max.
–
–
–
–
220
310
460
630
–
–
–
–
350
550
850
1050
750
–
–
20
20
20
–
–
–
6
Unit
–
–
–
–
–
–
–
–
–
–
–
–
mV
mV
mV
mV
mV
mV
mV
nA
µA
nA
MHz
pF
pF
dB
150 ns
800 ns
Document Number 88170
09-May-02
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