BCW60D 반도체 회로 부품 판매점
GENERAL PURPOSE TRANSISTOR
|
|
 Motorola Semiconductors |
BCW60A,B,C,D
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
vCEO
VCBO
vEBO
'C
Characteristic
'Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
pd
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R 0JA
mmJ 'Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
flC = 2.0 mAdc, lg = 0)
Emitter-Base Breakdown Voltage
(IE = 1.0 f(Adc, lc = 0)
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dc = 10 ,uAdc, Vqe = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
OC = 2.0 mAdc, Vqe = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
dC = 50 mAdc, Vce = 1.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
dc = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Collector-Emitter Saturation Voltage
dC = 50 mAdc, Bl = 1.25 mAdc)
dC = 10 mAdc, Bl = 0.25 mAdc)
Base-Emitter Saturation Voltage
dC = 50 mAdc, Ib = 1.25 mAdc)
dC = 50 mAdc, Ib = 0.25 mAdc)
Base-Emitter On Voltage
dc = 2.0 mAdc, Vce = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
Symbol
v (BR)CEO
v(BR)EBO
'GES
Min
32
'EBO
"FE
vCE(sat)
v BE(sat)
v BE(on)
20
40
.100
120
180
250
380
60
70
90
100
125
175
250
350
0.7
0.6
Value
32
32
5.0
100
Max
350
2.8
150
357
Max
20
20
20
220
310
460
630
250
350
500
700
0.55
0.35
1.05
0.85
0.75
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
nAdc
^iAdc
nAdc
Vdc
Vdc
Vdc
3-10
BCW60A,B,C,D
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted
Characteristic
I
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
C(| = 10 mAdc, VcE = 5.0 Vdc, f = 1.0 MHz)
Output Capacitance
(Vce = 10 Vdc, lc = 0, f = 1.0 MHz)
Noise Figure
dC = 0.2 mAdc, Vqe = 5.0 Vdc, Rs = 2.0 kn,
BWf = 1.0 kHz,
= 200 Hz)
SWITCHING CHARACTERISTICS
Turn-On Time
c(l = 10 mAdc, Ibi = 10 mAdc)
Turn-Off Time
B2(l = 10 mAdc, V B B = 3.6 Vdc, Ri = R2 = 5.0 kO,
R L = 990 «)
"
Symbol
C bo
toff
Min
Max
Unit
pF
dB
3-11
|
PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Motorola Semiconductors
( motorola )
BCW60D transistor
데이터시트 다운로드 :
[ BCW60D.PDF ]
[ BCW60D 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BCW60
NPN general purpose transistors - NXP Semiconductors
BCW60
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) - Siemens Semiconductor Group
BCW60
NPN Silicon AF Transistors - Infineon Technologies AG
BCW60
Surface mount Si-Epitaxial PlanarTransistors - Diotec Semiconductor
BCW60
Small Signal Transistors - Vishay
BCW60
NPN Silicon Epitaxial Planar Transistors - SEMTECH
BCW60
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS - Zetex Semiconductors
BCW60A
NPN EPITAXIAL SILICON TRANSISTOR - Samsung semiconductor
BCW60A
NPN EPITAXIAL SILICON TRANSISTOR - Fairchild Semiconductor