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Pan Jit International |
MMBTA92
PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE 300 Volts POWER 225 mWatts
FEATURES
• PNP silicon, planar design
• High voltage (max. 300V)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking: A92
ABSOLUTE RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
CONDITIONS
open emitter
SYMBOL
VCBO
open base
VCEO
open collector
VEBO
IC
I CM
I BM
TAMB<25oC ; note1
PTOT
TSTG
TJ
TAMB
MIN.
-
-
-
-
-
-
-
-65
-
-65
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.2-JUL.10.2009
MAX.
-300
-300
-5
-500
-600
-100
225
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
oC
oC
oC
PAGE . 1
MMBTA92
THE RMA L C HA RA C TE RIS TIC S
PA RA ME TE R
C OND ITIONS
Thermal resistance from junction to ambient note 1
No te 1 : Tra ns i s to r mo unte d o n F R-4 b o a rd 7 0 x 6 0 x 1 mm.
C HA RA C TE RIS TIC S
TAMB=25oC unless otherwise specified
PA RA ME TE R
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
Tra ns i ti o n fre q ue nc y
Note 2: Pulse test : tp < 300µs;δ<0.02
C OND ITIONS
I E=0;VCB=-200V
I C=0;VEB=-3V
VCE=-10V;note 2
I C=-1mA
I C=-10mA
I C=-30mA
I C=-20mA;I B=-2mA
I C=-20mA;I B=-2mA
I E=ie=0;VCB=-20V;
f=1MHz
I C=-10mA;VCE=-20V;
f=100MHz
S YMB OL
RΘJA
S YMB OL
I CBO
I EBO
hFE
V CE(SAT)
V BE(SAT)
CC
fT
VALUE
500
M IN .
-
-
25
40
25
-
-
-
50
MAX.
-250
-100
-
-
-
-500
-900
6
-
UNIT
K/W
UNIT
nA
nA
-
mV
mV
pF
MHz
REV.0.2-JUL.10.2009
PAGE . 2
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