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Bruckewell |
BCX51-BCX53
PNP Silicon AF Transistors
Features
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• RoHS compliant package
Mechanical Data
• Case: SOT-89 Molded plastic
• Epoxy: UL94V-O rate flame retardant
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
BCX51-BCX53
PNP Silicon AF Transistors
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol Parameter
BCX51
BCX52
VCEO
Collector-Emitter Voltage
45 60
VCBO
Collector-Base Voltage
45 60
VEBO
IC
ICM
Emitter-Base Voltage
Collector Current—Continuous
Peak collector current, tp ≤ 10
55
1
1.5
IB Base current
100
IBM Peak base current
Ptot Total power dissipation, TS ≤ 120 °C
200
2
TJ Junction temperature
150
Tstg Storage temperature
-65~+150
BCX53
80
100
5
Unit
V
V
V
A
A
mA
mA
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Characteristic
RthJS
Junction - soldering point
Max
Unit
≤ 15 K/W
DC CHARACTERISTICS
Symbol
Parameter
Collector-Emitter Breakdown V oltage
V(BR)CEO
(Ic=-10mAdc,IB=0)
Collector-Base Breakdown Voltage
V(BR)CBO
(Ic=-10μAdc,IE=0)
Emitter-Base Breakdown Voltage
V(BR)EBO
(IE=-10μAdc,Ic=0)
ICBO
Collector Cutoff Current V
(VCB=-30v)
(VcB=-30Vdc,TA=150°C)
DC Current Gain
HFE
(IC = 5 mA, VCE = 2 V)
(IC = 150 mA, VCE = 2 V)
BCX51
BCX52
MIN TYP MAX UNIT
45 V
60 V
BCX53
BCX51
BCX52
BCX53
80
45
60
100
V
V
V
V
BCX51
BCX52
BCX53
5
5
5
V
V
V
V
0.1 uA
20 uA
BCX51
25
BCX52
25
BCX53
25
BCX51-53
40
250
hFE-grp.10 63 100 160
hFE-grp.16 100 160 250
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
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