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Multicomp |
PNP Medium Power Transistor
Features:
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCX54/BCX55/BCX56
Applications:
• Medium power general purposes
• Driver stages of audio amplifiers
Collector
3
1
Base
PNP
2
Emitter
Pin Configuration:
1. Base
2. Emitter
3. Collector
Maximum Ratings
Parameter
Collector - Base Voltage - BCX51
- BCX52
- BCX53
Collector - Emitter Voltage - BCX51
- BCX52
- BCX53
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Peak
Total device Dissipation
Junction and Storage Temperature
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www.farnell.com
www.newark.com
Symbol
VCBO
VCEO
Vebo
IC
ICM
PD
Tj, Tstg
Value
-45
-60
-100
-45
-60
-80
-5
-1
-1.5
500
-65 to +150
Unit
V
A
mW
°C
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29/04/13 V1.0
PNP Medium Power Transistor
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Parameter
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emmiter - Base Breakdown Voltage
Collector Cut-Off Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test Conditions
IC=-100μA, IE=0 BCX51
BCX52
BCX53
IC=-10mA, IB=0 BCX51
BCX52
BCX53
IE=-10μA, IC=0
VCB=-30V, IE=0
DC Current Gain
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
hFE VCE=-2V, IC=-150mA -10
-16
VCE=-2V, IC=-500mA
Collector - Emitter Saturation Voltage
Base Emitter Voltage
Transition Frequency
VCE(sat)
VBE
fT
IC=-500mA, IB=-50mA
IC=-500mA, VCE=-2V
VCE=-10, IC=-50, f=20MH
Min.
-45
-60
-100
-45
-60
-80
-5
Typ.
Max.
-0.1
Unit
V
A
25
40 250
63 160
100 250
25
-0.5
V
-1
125 MHz
Total power dissipation Ptot = f(TS)
Collector current IC = f (VBE)
VCE = 2V
www.element14.com
www.farnell.com
www.newark.com
Page <2>
29/04/13 V1.0
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