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PDF BDC07 Data sheet ( Hoja de datos )

Número de pieza BDC07
Descripción HIGH VOLTAGE TRANSISTORS
Fabricantes Motorola Semiconductors 
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MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
' Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
Rejc
R#jc
BDC BDC
05 07
300 250
300 250
5.0
500
1
8.0
2.5
50
-55 to +150
Max
50 -
125
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BDC05
BDC07
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
HIGH VOLTAGE TRANSISTORS
NPN SILICON
Refer to MPSW42 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol |
|
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(IC = 1 mAdc, Ib = 0)
BDC05
BDC07
V(BR)CEO
Collector-Base Breakdown Voltage
dC = 100 uAdc, Ie = 0)
BDC05
BDC07
V(BR)CB0
Emitter-Base Breakdown Voltage
(IE = 100 uAdc, Ic = 0)
BDC05
BDC07
V(BR)EBO
Collector Cutoff Current
(VcB = 200 Vdc, Ie = 0)
BDC05
BDC07
ICBO
Emitter Cutoff Current
(Vbe = 5.0 Vdc, Ic = 0)
BDC05
BDC07
lEBO
ON CHARACTERISTICS
DC Current Gain
dC = 25 mAdc, VcE = 20 Vdc)
BDC05
BDC07
hFE
Collector-Emitter Saturation Voltage
(IC = 20 mAdc, Ib = 2.0 mAdc)
Base-Emitter Saturation Voltage
dC = 20 mA, Ib = 2.0 mA)
DYNAMIC CHARACTERISTICS
VcE(sat)
VBE(sat)
Current Gain-Bandwidth Product
dC = 1 mAdc, VcE = 1 Vdc, f = 50 MHz)
Collector-Base Capacitance
(VcB = 30 Vdc, Ie = 0, f = 1 .0 MHz)
(1) Pulse Test: Pulse Width S 300 us. Duty Cycle S 2.0%.
fT
Cre
Min.
300
250
300
250
5.0
5.0
40
50
60
Max.
||
_
_
0.01
10
1
-
2
2.0
-
2.8
Unit
Vdc
Vdc
Vdc
|jAdc
uAdc
Vdc
Vdc
MHz
PF
2-149

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