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PDF BDB04 Data sheet ( Hoja de datos )
| Número de pieza | BDB04 | |
| Descripción | ONE WATT AMPLIFIER TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BDB04 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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BDB04
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
ONE WATT
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to BDB02A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25 °C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
Rwc
Rwc
Value
45
60
5.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Ade
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
| Symbol | Min. | Typ. | Max. | Unit
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ib = 0)
V(BR)CES
45
Vdc
Collector Cutoff Current
(V C B = 45 V, El = 0)
Emitter Cutoff Current
(VEB = 4 V, Ic = 0)
ON CHARACTERISTICS
ICBO
0.1
.
uAdc
—lEBO
—
uAdc
0.1
DC Current Gain
(IC = 150 mA, Vce = 1
dc = 1 a, v C E = 10 v)
V)
Collector-Emitter Saturation Voltage
(IC = 150 mA, Ib = 15 mA)
Base-Emitter Saturation Voltage
(IC = 150 mA, Ib = 15 mA)
SMALL-SIGNAL CHARACTERISTICS
-hFE
100
300
15
VCE(sat)
Vdc
1.1
VBE(sat)
—
—
Vdc
1.1
Current-Gain Bandwidth Product
dC = 50 mA, Vce = 1 V, f = 1 00 MHz)
fT
150
MHz
Collector-Base Capacitance
(Vcb = 10 V, f = 1 MHz)
— —Ccb pF
15
2-142
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BDB04.PDF ] | |
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