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PDF BDB02B Data sheet ( Hoja de datos )
| Número de pieza | BDB02B | |
| Descripción | ONE WATT AMPLIFIER TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BDB02B (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MAXIMUM RATINGS
Rating
Symbol BDB BDB BDB BDB Unit
02A 02B 02C 02D
Collector-Emitter Voltage
VCEO 45 60 80 100 Vdc
Collector-Base Voltage
VCES 45 60 80 100 Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
ic
PD
0.5 Adc
1.0 Watt
8.0 mW/°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
pd
Tj. T stg
2.5
20
-55 to +150
Watt
mW/°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R«JC
R^JC
50
125
°C/W
°c/w
BDB02A
Thru
BDB02D
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
ONE WATT
AMPLIFIER TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Voltage
(IC = 10 mA, Ib = 0)
BDB02A
BDB02B
BDB02C
BDB02D
Collector Cutoff Current
(V C B = 45 V, El = 0)
(V C B = 60 V, El = 0)
(V C B = 80 V, IE = 0)
(VC B = 100 V, IE = 0)
Emitter Cutoff Current
(IC = 0, V E B = 5.0 V)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, Vce = 1 V)
(IC = 500 mA, Vce = 2 V)
Collector-Emitter Saturation Voltage
(IC = 1000 mA, Ib = 100 mA)
Collector-Emitter on Voltage
dC = 1000 mA, VCE = 1 V)
DYNAMIC CHARACTERISTICS
\
Current Gain Bandwidth Product
dC = 200 mA, Vce = 5 V, f = 100 MHz)
Output Capacitance
(Vcb = 10 V, IE = 0, f = 1 MHz)
Symbol
V(BR)CE0
ICB0
lEBO
hFE
VCE(sat)
VBE(on)
fT
Cob
Min.
45 .
60
80
100
40
25
50
Max.
0.1
0.1
0.1
0.1
100
400
0.7
1.2
30
Unit
Vdc
pAdc
nAdc
Vdc
Vdc
MHz
pF
2-139
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BDB02B.PDF ] | |
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