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PDF BCX49 Data sheet ( Hoja de datos )

Número de pieza BCX49
Descripción HIGH CURRENT TRANSISTORS
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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No Preview Available ! BCX49 Hoja de datos, Descripción, Manual

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
R«JC
R^jc
BCX BCX BCX
45 47 49
45 60 80
45 60 80
5.0
1.0
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BCX45
BCX47
BCX49
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
HIGH CURRENT TRANSISTORS
NPN SILICON
Refer to MPSA05 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
dC = 10 mAdc, Ib = 0)
BCX45
BCX47
BCX49
V(BR)CE0
Collector-Base Breakdown Voltage
(IC = 1 00 uAdc, Ie = 0)
BCX45
BCX47
BCX49
V(BR)CB0
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 30 Vdc - = 0)
(Vcb = 40 Vdc - Ie = 0)
(Vcb = 60 Vdc - Ie = 0)
BCX45
BCX47
BCX49
ON CHARACTERISTICS*
V(BR)EB0
ICBO
DC Current Gain
dC = 1 mAdc, Vce = 2.0 Vdc)
(IC = 1 00 mAdc, Vce = 2.0 Vdc)
(IC = 500 mAdc, Vce = 2.0 Vdc)
(IC = 1 Adc, Vce = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, \q = 50 mAdc)
(IC = 1 Adc, Ib = 100 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter On Voltage
(IC = 500 mAdc, VcE = 2.0 Vdc)
' Pulse test-Pulse width < 300 us - Duty cycle 2%
VBE(sat)
VBE(on)
Min.
45
60
80
45
60
80
5.0
40
50
30
15
Typ.
Max.
|
Unit
\
Vdc
Vdc
Vdc
nAdc
100
100
100
130
140
60
0.2
0.3
0.85
0.85
0.5
1.2
Vdc
Vdc
Vdc
2-127

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