BCX25 반도체 회로 부품 판매점
HIGH VOLTAGE TRANSISTORS
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 Motorola Semiconductors |
7
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj. T st g
Symbol
Rejc
Rwc
BCX BCX BCX
25 27 29
60 80 100
60 80 100
5.0
200
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BCX25
BCX27
BCX29
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
HIGH VOLTAGE TRANSISTORS
NPN SILICON
Refer to MPS8098 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symhol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
dC = 10 mAdc, IB = 0)
BCX25
BCX27
BCX29
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 100 uAdc, Ie = 0)
BCX25
BCX27
BCX29
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
Collector Cutoff Current
Vcb = 40 Vdc - Ie =
VcB = 60 Vdc - Ie =
VcB = 80 Vdc - Ie =
BCX25
BCX27
BCX29
ON CHARACTERISTICS*
V(BR)EBO
ICBO
DC Current Gain
(IC = 1 mAdc, VcE = 5.0 Vdc)
(IC = 10 mAdc, VcE = 5.0 Vdc)
dC = 100 mAdc, VcE = 5.0 Vdc)
hFE
CoJIector-Emitter Saturation Voltage
(ic = 100 mAdc, Ib = 10 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VBE(sat)
Base-Emitter On Voltage
(IC = 1 mAdc, VcE = 5.0 Vdc)
* Pulse test-Pulse width s 300 us - Duty cycle 2%
VBE(on)
Min.
60
80
100
45
80
100
5.0
50
70
50
Typ.
150
250
300
0.1
0.85
0.68
Unit
Vdc
Vdc
100
100
100'
Vdc
nAdc
400
0.25
1.0
Vdc
Vdc
Vdc
2-123
BCX25, BCX27, BCX29
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25 °C unless otherwise noted)
Characteristic
SMALL SIGNAL CHARACTERISTICS
Symbol
Current Gain-Bandwidth Product
dC = 50 mAdc, Vqe = 5.0 Vdc, f = 1 00 MHz)
Output Capacitance - Common Base
(Vcb = 1 Vdc, l£ = 0, f = 1 .0 MHz)
Input Capacitance - Common Base
(Vqb = 0.5 Vdc, lc = 0, f = 1 .0 MHz)
fT
Cob
Cjb
100
Noise Figure
dC = 200 uAdc, V C E = 5.0 Vdc, Rs = 2.0 Kohm,
BWf = 1.0 KHz,
= 200 Hz)
NF
Input Impedance
(IC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
hie
Voltage Feedback Ratio
(IC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
hre
Small-Signal Current Gain
(IC = 10 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
hfe
Output Admittance
dC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
Turn - On delay Time (VBE(off) = 0.5 V, bI 1 = 3 mA)
(Vce = 40 Vdc, lc = 30 mAdc (see Figure 1)
=3Rise Time (VBE(off) = 0.5 V, bI 1
mA)
(Vce = 40 Vdc, lc = 30 mAdc (see Figure 1)
Storage Time (Ibi = lB2 = 3 mA)
(Vce = 40 Vdc, lc = 30 mAdc (see Figure 1)
Fall Time (Ib 1 = lB2 = 3 mA)
(Vce = 40 Vdc, lc = 30 mAdc (see Figure 1)
hoe
td
tr
ts
tf
Typ.
250
3.0
16
2.0
1.3
1.6-10" 4
360
55
19
40
900
100
Max.
6.0
25
.
Unit
MHz
pF
PF
dB
Kohm
lamho
ns
ns
ns
ns
FIGURE 1 - SWITCHING TIME TEST CIRCUITS
Turn-off Time
~ 10V—-J5.0Msf»—
t = 3.0 ns
r
•Total Shunt Capacitance of Test Jig and Connectors
FIGURE 2 - SWITCHING TIMES
1000
= vcc =
-700 IC/lB =
-500
IB1 =
- Tj =
B2
300
-g 200
^- inn
~ 70
50
30
—tf -.
i
20
m td @ VBE(off) = 5 V
20 30
50 70
IC, COLLECTOR CURRENT(mA)
2-124
.-
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BCX25 transistor
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