BC640 반도체 회로 부품 판매점
SILICON PLANAR EPITAXIAL TRANSISTORS
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 CDIL |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
ECB
High Current Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation at Ta=25ºC
Derate Above 25ºC
Total Device Dissipation at Ta=25ºC
Total Device Dissipation at Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PD
**PD
PD
Tj, Tstg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Junction to Ambient
Rth (j-c)
Rth (j-a)
**Rth (j-a)
BC635
BC636
45
45
BC637
BC638
60
60
5.0
1.0
800
6.4
1.0
2.75
22
- 55 to +150
BC639
BC640
80
80
45
156
125
UNIT
V
V
V
A
mW
mW/ºC
W
W
mW/ºC
ºC
ºC/W
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
BC635/BC636
BC637/BC638
BC639/BC640
Collector Base Voltage
VCBO
IC=100µA, IE=0
BC635/BC636
BC637/BC638
BC639/BC640
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut Off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Ta=125ºC
Base Emitter (On) Voltage
*VBE (on)
IC=500mA, VCE=2V
Collector Emitter Saturation Voltage *VCE (sat)
IC=500mA, IB=50mA
MIN
45
60
80
45
60
80
5.0
MAX
0.1
10
1.0
0.5
UNIT
V
V
V
V
V
V
V
µA
µA
V
V
*Pulse Test: Pulse Width < 300µs, Duty Cycle 2%
**Transistors mounted on printed circuit board, max Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm
BC635_BC640Rev_4 030106E
Continental Device India Limited
Data Sheet
Page 1 of 5
SILICON PLANAR EPITAXIAL TRANSISTORS
ECB
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
*hFE VCE=2V, IC=5mA
MIN MAX
25
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transistors Frequency
Output Capacitance
Input Capacitance
VCE=2V, IC=150mA
BC635/BC636
BC637/BC638
BC639/BC640
Group-10
Group-16
VCE=2V, IC=500mA
40
40
40
63
100
25
250
160
160
160
250
SYMBOL
TEST CONDITION
fT IC=50mA, VCE=2V, f=100MHz
NPN
PNP
Cob IE=0, VCB=10V, f=1MHz
NPN
PNP
Cib VBE=0.5V, f=1MHz
NPN
PNP
TYP
200
150
7
9
50
110
*Pulse Test: Pulse Width < 300µs, Duty Cycle 2%
BC635_BC640Rev_4 030106E
UNIT
UNIT
MHz
MHz
pF
pF
pF
pF
Continental Device India Limited
Data Sheet
Page 2 of 5
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제조업체: CDIL
( cdil )
BC640 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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