BC638 반도체 회로 부품 판매점
PNP Type Plastic Encapsulate Transistors
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 SeCoS |
Elektronische Bauelemente
BC636/638/640
PNP Type
Plastic Encapsulate Transistors
FEATURE
Power Dissipation:
PCM: 0.83 mW (Tamb=25oC)
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
MAXIMUM RATINGS (TA=25 oC unless otherwise specified)
0.4 6+–00..11
0.43+–00..0078
(1.27 Typ).
123
1.25+–00..22
2.54±0.1
1: Emitter
2: Collector
3: Base
PARAMETERS
SYMBOLS
Collector - Emitter Voltage
BC636
VCEO
BC638
Collector - Base Voltage
BC640
BC636
VCBO
BC638
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
BC640
VEBO
IC
ICP
IB
Junction, Storage Temperature
Thermal Resistance from Junction to Ambient
TJ,TSTG
RθJA*
ELECTRICAL CHARACTERISTICS (TA=25 oC unless otherwise specified)
VALUES
UNIT
-45
-60
-80
-45
-60
-100
-5
-1
-1.5
100
150, -65 ~ 150
150
V
V
V
V
V
V
V
A
A
mA
oC
K/w
PARAMETERS
Collector - emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector - emitter saturation voltage
Base - emitter voltage
Transition frequency
CLASSIFICATION OF hFE(2)
SYMBOL TEST CONDITIONS
MIN
IC=10mA, IB=0
V(BR)CEO
BC636
BC638
I CBO
VCB=-30V, IE=0
BC640
I EBO
hFE(1)
VEB=-5V, IB=0
VCE=-2V, IC=-5mA
hFE(2) VCE=-2V, IC=-150mA BC636-10
BC636-16, BC638-16, BC640-16
hFE(3) VCE=-2V, IC=-500mA
VCE(sat) IC=-500mA, IB=-50mA
VBE(ON) VCE=-2V, IC=-500mA
f T VCE=-5V, IC=-50mA, f=100MHz
-45
-60
-80
40
63
100
25
100
TYP MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
160
250
-0.5 V
-1 V
MHz
RANK
RANGE
BC636-10
63-160
BC636-16, BC638-16, BC640-16
100-250
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
Elektronische Bauelemente
TYPICAL CHARACTERISTICS
BC636/638/640
PNP Type
Plastic Encapsulate Transistors
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individu
Page 2of 2
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BC638 transistor
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