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PDF BC560 Data sheet ( Hoja de datos )
| Número de pieza | BC560 | |
| Descripción | LOW NOISE TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC560 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@TcTotal Device Dissipation
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
R0JC
RftJC
BC BC
559 560
30 45
30 50
5.0
100
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BC559
BC560
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
LOW NOISE TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol | Min. | Typ. j Max. ~j~ Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) BC559
BC560
V(BR)CEO
30
45
Vdc
Collector-Base Breakdown Voltage
(IC = 10 uAdc, IE = 0) BC559
BC560
V(BR)CB0
30
50
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
V(BR)EBO
5
Vdc
Collector Cutoff Current
(VcB = 30 Vdc, Ie = 0)
(Vcb = 30 Vdc, Ie = 0, Ta = + 125°C)
Emitter Cutoff Current
(Veb = 4 Vdc, Ie = 0)
ON CHARACTERISTICS
ICBO
lEBO
15 nAdc
5 jiAdc
nAdc
15
DC Current Gain
(IC = 10 uAdc, VcE = 5 Vdc)
(IC = 2 mAdc, VcE = 5 Vdc)
BC559B/560B
BC559C/560C
BC559B/560B
BC559C/560C
BC559/560
hFE
100 150
100 270
180 290 460
380 500 800
120 800
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 0.5 mAdc)
(lc = 10 mAdc, Ib = see note 1)
(IC = 100 mAdc, Ib = 5 mAdc, see note 2)
Base-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 5 mAdc)
Base-Emitter On Voltage
dC = 10uAdc, VcE = 5 Vdc)
(IC = 100 uAdc, VcE = 5 Vdc)
dC = 2 mAdc, VcE = 5 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC = 1 mAdc, VcE = 5 Vdc, f = 1 00 MHz)
Collector-Base Capacitance
(VCE = 1 Vdc, Ie = 0, f = 1 MHz)
mANote 1 : Ib is value for which lc = 11
at VcE = 1 V
VcE(sat)
VBE(sat)
VBE(on)
0.55
0.075
0.3
0.25
1.1
0.52
0.55
0.62
0.25
0.6
0.75
Vdc
Vdc
Vdc
fT MHz
250
Ccbo
pF
2.5
Note 2: Pulse test = 300 us - Duty cycle = 2%
2-111
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BC560.PDF ] | |
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