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Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC549B/D
Low Noise Transistors
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC549 BC550 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30 45
30 50
5.0
100
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
BC549B,C
BC550B,C
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
BC549B,C
BC550B,C
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
V(BR)EBO
ICBO
IEBO
Min
30
45
30
50
5.0
—
—
—
BC549B,C
BC550B,C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
Vdc
——
——
Vdc
——
——
— — Vdc
— 15 nAdc
— 5.0 µAdc
— 15 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
BC549B,C BC550B,C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BC549B/550B
BC549C/550C
BC549B/550B
BC549C/550C
hFE
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
Base–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
Base–Emitter On Voltage
(IC = 10 µAdc, VCE = 5.0 Vdc)
(IC = 100 µAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
BC549B/BC550B
BC549C/BC550C
fT
Ccbo
hfe
Noise Figure
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)
NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.
NF1
NF2
Min
100
100
200
420
—
—
—
—
—
—
0.55
—
—
240
450
—
—
Typ
150
270
290
500
0.075
0.3
0.25
1.1
0.52
0.55
0.62
250
2.5
330
600
0.6
—
Max
—
—
450
800
0.25
0.6
0.6
—
—
—
0.7
—
—
500
900
2.5
10
Unit
—
Vdc
Vdc
Vdc
MHz
pF
—
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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