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BC550B 반도체 회로 부품 판매점

LOW NOISE TRANSISTORS



Motorola Semiconductors 로고
Motorola Semiconductors
BC550B 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC549B/D
Low Noise Transistors
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC549 BC550 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30 45
30 50
5.0
100
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
BC549B,C
BC550B,C
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
BC549B,C
BC550B,C
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
V(BR)EBO
ICBO
IEBO
Min
30
45
30
50
5.0
BC549B,C
BC550B,C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
Vdc
——
——
Vdc
——
——
— — Vdc
— 15 nAdc
— 5.0 µAdc
— 15 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


BC550B 데이터시트, 핀배열, 회로
BC549B,C BC550B,C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BC549B/550B
BC549C/550C
BC549B/550B
BC549C/550C
hFE
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
Base–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
Base–Emitter On Voltage
(IC = 10 µAdc, VCE = 5.0 Vdc)
(IC = 100 µAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
BC549B/BC550B
BC549C/BC550C
fT
Ccbo
hfe
Noise Figure
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz)
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz)
NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.
NF1
NF2
Min
100
100
200
420
0.55
240
450
Typ
150
270
290
500
0.075
0.3
0.25
1.1
0.52
0.55
0.62
250
2.5
330
600
0.6
Max
450
800
0.25
0.6
0.6
0.7
500
900
2.5
10
Unit
Vdc
Vdc
Vdc
MHz
pF
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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