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CDIL |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
BC 446, A, B
BC 448, A, B
BC 450, A, B
TO-92
Plastic Package
General Purpose High Voltage Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Voltage
VCEO
60
Collector Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
5
Collector Current Continuous
IC
300
Total Device Dissipation@ Ta=25ºC
PD
Derate Above 25ºC
Total Device Dissipation@ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Tj, Tstg
Temperature Range
TYP
80
80
5
625
5
1.5
12
-55 to +150
MAX
100
100
5
THERMAL RESISTANCE
Junction to ambient
Junction to case
Rth(j-a)
Rth(j-c)
200
83.3
UNITS
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 4
SILICON PLANAR EPITAXIAL TRANSISTORS
BC 446, A, B
BC 448, A, B
BC 450, A, B
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter BreakdownVoltage BVCEO * IC=1mA,IB=0
BC446
60
BC448
80
BC450
100
Collector Base Breakdown Voltage
BVCBO IC=100uA, IE =0
BC446
60
BC448
80
BC450
100
Emitter Base Breakdown Voltage
BVEBO IE=10uA, IC=0
5
Collector-Cut off Current
ICBO
BC446
VCB =40V, IE =0
BC448
VCB =60V, IE =0
BC450
VCB =80V, IE =0
DC Current Gain
hFE*
NON SUFFIX
IC=2mA,VCE=5V
A
B
NON SUFFIX
IC=2mA,VCE=5V
A
B
50
120
180
50
100
160
NON SUFFIX
A
B
IC=100mA,VCE=5V
50
60
90
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
VCE(sat) IC=100mA,IB=10mA
VBE(sat)
VBE(on)
IC=100mA,IB=10mA
IC=2mA,VCE =5V
IC=100mA,VCE =5V*
0.55
DYNAMICS CHARACTERISTICS
Transition Frequency
fT IC=50mA, VCE=5V
f=100MHz
100
Pulse Test : Pulse width < 300µs, Duty Cycle <2%.
TYP
0.85
MAX
100
100
100
460
220
460
0.25
0.70
1.2
UNITS
V
V
V
V
V
V
V
nA
nA
nA
V
V
V
V
MHz
Continental Device India Limited
Data Sheet
Page 2 of 4
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