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PDF BC368 Data sheet ( Hoja de datos )
| Número de pieza | BC368 | |
| Descripción | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC368 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BC368
TO-92
BCE
Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF
Applications, Suitable for Class-B Audio Output Stages up to 3W
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCES
25
Collector -Emitter Voltage
VCEO
20
Emitter- Base Voltage
VEBO
5.0
Collector- Current
IC 1.0
Collector- Current Peak Value
ICM
2.0
Base- Current
IB 100
Base- Current Peak Value
IBM
200
Power Dissipation @ Ta=25 deg C
PTA
0.8
@ Tc=25 deg C
PTC
1.0
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-65 to +150
Thermal Resistance
Junction to Ambient in Free Air
Rth (j-a)
156
Junction to Ambient *
Rth (j-a)
125
Junction to Case
Rth (j-c)
60
*Mounted on printed-circuit board , maximum lead length 4mm, mounting
pad for collector lead min 10 mm x10 mm
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut- off Current
ICBO
IE=0, VCB=25V
Emitter Cut- off Current
Base- Emitter on Voltage
Collector- Emitter Saturation Voltage
IEBO
VBE(on)
VCE(Sat)
Tj=150 deg C
IE=0, VCB=25V
VEB=5V, IC=0
IC=5mA, VCE=10V
IC=1A, VCE=1V
IC=1A, IB=100mA
UNIT
V
V
V
A
A
mA
mA
W
W
deg C
deg C
deg C/W
deg C/W
deg C/W
MIN TYP MAX
- - 10
-
- - 1.0
- - 10
- 0.7
- 1.0
- - 0.5
UNIT
uA
mA
uA
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC368.PDF ] | |
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