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PNP General Purpose Transistor
P b Lead(Pb)-Free
BC327/BC328
COLLECTOR
1
2
BASE
3
EMITTER
TO-92
1
2
3
Maximum Ratings(TA=25°C unless otherwise noted)
Rating
Symbol
BC327
BC328
Collector-Base voltage
VCBO
-50
-30
Collector-Emitter voltage
VCEO
-45
-25
Emitter-Base voltage
VEBO
-5.0
-5.0
Collector Current Continuous
lC 800
Total Device Dissipation
Alumina Substrate,TA=25°C
PD 625
Operating Junction Temperature Range
TJ
-55 to +150
Storage Junction Temperature Range
Tstg
-55 to +150
Unit
V
V
V
mA
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
IC=-10µA, IC=0
BC327
BC328
BC327
BC328
BC327
BC328
Symbol Min Typ Max Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
-50
-30
-45
-25
-5.0
-
-
-
-V
-V
- Vdc
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29-Jun-06
BC327/BC328
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) (Countinued)
Characteristics
Symbol Min Typ
OFF CHARACTERISTICS
Collector Cut-off Current
VCE=-40V, lB=0
VCE=-20V, lB=0
Collector Cut-off Current
VCB=-45V, lE=0
VCB=-25V, lE=0
Emitter Cutoff Current
VEB=-4.0V, lC=0
BC327
BC328
BC327
BC328
lCEO
lCBO
lEBO
Max
-0.2
-0.1
-0.1
Unit
µA
µA
µA
ON CHARACTERISTICS
DC Current Gain
VCE=-1V, lC=-100mA
VCE=-1V, lC=-300mA
Collector-Emitter Saturation Voltage
lC=-500mA, lB=-5mA
Base-Emitter Saturation Voltage
lC=-500mA, lB=-5mA)
Transition frequency
VCE=-5V, lC=-10mA, f=100MHz
hFE1 100 - 630 -
hFE2
40
-
VCE(sat)
-
- -0.7 V
VBE(sat)
-
- -1.2 V
fT 260 - - MHz
hFE Classification
Classification
hFE1
hFE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
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