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PDF PZTA42T1 Data sheet ( Hoja de datos )
| Número de pieza | PZTA42T1 | |
| Descripción | High Voltage Transistor Surface Mount | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistor
Surface Mount
NPN Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
PZTA42T1
Motorola Preferred Device
SOT–223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
4
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Total Power Dissipation @ TA = 25°C(1)
Storage Temperature Range
Junction Temperature
DEVICE MARKING
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
300
300
6.0
500
1.5
– 65 to +150
150
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
P1D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction-to-Ambient(1)
RθJA
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Unit
°C/W
Symbol
Min
Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
— Vdc
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
300
— Vdc
Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
V(BR)EBO
6.0
— Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
0.1 µAdc
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
—
0.1 µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300 µs, δ = 0.02.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–811
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PZTA42T1.PDF ] | |
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