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BDC01D 반도체 회로 부품 판매점

One Watt Amplifier Transistor



ON Semiconductor 로고
ON Semiconductor
BDC01D 데이터시트, 핀배열, 회로
BDC01D
One Watt Amplifier
Transistor
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
100 Vdc
100 Vdc
5.0 Vdc
0.5 Adc
1.0 W
8.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 W
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
TO−92 (TO−226)
CASE 29−10
1 STYLE 1
23
MARKING DIAGRAM
BDC
01D
AYWW G
G
BDC01D = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
ORDERING INFORMATION
Device
BDC01DRL1
BDC01DRL1G
Package
TO−92
TO−92
(Pb−Free)
Shipping
2000 / Tape & Reel
5000 / Tape & Reel
Publication Order Number:
BDC01D/D


BDC01D 데이터시트, 핀배열, 회로
BDC01D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCB = 100 V, IE = 0)
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 1)
(IC = 1000 mA, IB = 100 mA)
Collector −Emitter On Voltage (Note 1)
(IC = 1000 mA, VCE = 1.0 V)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%.
Symbol
Min Max
Unit
V(BR)CEO
100
Vdc
ICBO
− 0.1 mAdc
IEBO
− 100 nAdc
hFE
VCE(sat)
VBE(on)
40 400
25 −
− 0.7 Vdc
− 1.2 Vdc
fT 50 − MHz
Cob − 30 pF
400
TJ = 125°C
200
25°C
−55°C
100
80
60
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
50
70 100
VCE = 1.0 V
200 300
500
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BDC01D transistor

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