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ON Semiconductor |
BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
VCEO
−65
−45
−30
V
Collector-Base Voltage
BC856
BC857
BC858, BC859
VCBO
−80
−50
−30
V
Emitter−Base Voltage
VEBO
−5.0
V
Collector Current − Continuous
IC −100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
−55 to
+150
°C
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1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
3
xxM
12
xx = Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 8
1
Publication Order Number:
BC856ALT1/D
BC856ALT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856 Series
BC857A, BC857B Only
BC858, BC859 Series
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
125
220
420
−
−
−
−
−0.6
−
100
−
−
−
Typ Max Unit
−−V
−−
−−
−−V
−−
−−
−−V
−−
−−
−−V
−−
−−
− −15 nA
− −4.0 mA
90 −
150 −
270 −
180 250
290 475
520 800
− −0.3
− −0.65
−0.7 −
−0.9 −
− −0.75
− −0.82
−
V
V
V
− − MHz
− 4.5 pF
dB
− 10
− 4.0
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