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BFW92A 반도체 회로 부품 판매점

HIGH FREQUENCY TRANSISTOR



Motorola Semiconductors 로고
Motorola Semiconductors
BFW92A 데이터시트, 핀배열, 회로
BFW92A
CASE 317A-01, STYLE 2
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T"c = 105°C
Derate above 105"C
Storage Temperature
Symbol
vCEO
v CBO
VEBO
'C
PD
Tstg
Value
15
25
2.5
35
180
4.0
-65 to 150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case(1)
"we
250
°CA/V
(1) Case temperature measured on collector lead immediately adjacent to body of
package.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.!
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
c(l = 0.1 mAdc, = 0)
Emitter-Base Breakdown Voltage
E(l = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 10 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
c(l = 2.0 mAdc, Vce = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 10 mAdc, V C e = 10 Vdc, f = 0.5 GHz)
Collector-Base Capacitance
(Vcb
=
10
Vdc
-
f
=
1-0 MHz, Emitter Guarded)
FUNCTIONAL PERFORMANCE
Optimum Noise Figure (Tuned)
dC = 10 mAdc, VC e = 10 Vdc, f = 0.5 GHz)
Noise Figure (Untuned, R$ = Rl = 50 CI)
C(l = 10 mAdc, Vce = 10 Vdc, f = 0.5 GHz)
Maximum Available Gain(2)
dC = 10 mAdc, Vce = 10 Vdc, f = 0.5 GHz)
Insertion Gain
Uq
=
10 mAdc, Vce
=
Vdc
'
f
=
0- 5
GHz
>
<2)G„
JS21I
(1 -|Sn|2){i -|s 22 l 2 )
Symbol
v (BR)CEO
v (BR)CBO
V(BR)EBO
ICBO
Min
15
25
2.5
hFE
fT
Ccb
NFopt
NF
MAG
|S 2 1I 2
20
Typ Max Unit
[|
Vdc
— — Vdc
Vdc
50 nAde
50 150
4.5 GHz
0.5 1.0 PF
2.7 dB
3.0 dB
16 dB
14 dB
7-96


BFW92A 데이터시트, 핀배열, 회로
BFW92A
FIGURE 1 - 30-900 MHz BROADBAND AMPLIFIER
RS = 75n
V CE = 10 V
IC = 10 mA
C3, C4, C5 0.1 M F Chip Capacitor
L1 , L2 3.3 ,iH Molded Inductor
All Resistors 1 /4 W, 20%
FIGURE 2 - BROADBAND GAIN (Circuit Figure 1 )
05 0.1
2
f, FREQUENCY (GHz)
v r E = 1 Vdc
ic = 10 mAdc
III
I
04 07 1.0
FIGURE 4 - MAXIMUM AVAILABLE GAIN
versus FREQUENCY
^,^
ic = 10m A
*•**!
^1 ^ ^ ^
k^>i
5:
v CE = 1 a vdc
015 0.2
0.5 07 10
f. FREQUENCY (GHz)
FIGURE 3 - 2nd AND 3rd ORDER INTERCEPT POINTS
+30
_ +20
E
§.+10
ECir
2nd Order Intercept
/J
3rdOrd er Int ercep\ck.
1o
CD
£ -10
t -20
o
^-30
°^-40
-50
Measured in circuit
shown in Figure 1.
295.25 and 205.25 MHz.
-60
-70 -60 -50 -40 -30 -20 -10 0+10 +20 +30 +40 +50 +60 +70
Pin, INPUT POWER (dBm)
40
36
S 32
z 28
«t
z 24
CD
| 20
z 16
^ 12
80
4
FIGURE 5 - IS21I 2 versus FREQUENCY
•c = i )mA
^ V CE = 10\ dc
15 02
03
05 07
1.0
15 20
(.FREQUENCY (GHz)
3.0
7-97




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BFW92A transistor

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