파트넘버.co.kr BD239 데이터시트 PDF


BD239 반도체 회로 부품 판매점

NPN PLASTIC POWER TRANSISTOR



CDIL 로고
CDIL
BD239 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
BD239, BD239A, BD239B, BD239C
BD240, BD240A, BD240B, BD240C
BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS
BD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN . MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 1 A; IB = 0.2 A
D.C. current gain
IC = 0.2 A; VCE = 4 V
VCBO
VCEO
IC
Ptot
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
VCBO
VCEO
VEBO
239 239A 239B 239C
240 240A 240B 240C
max. 55 70 90 115
max. 45 60 80 100
max.
2.0
max.
30
max.
150
V
V
A
W
°C
max.
0.7
V
min.
40
239 239A 239B 239C
240 240A 240B 240C
max. 55 70 90 115
max. 45 60 80 100
max.
5.0
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3


BD239 데이터시트, 핀배열, 회로
BD239, BD239A, BD239B, BD239C
BD240, BD240A, BD240B, BD240C
Collector current
Collector current (Peak value)
Base current
Total power dissipation upto TA=25°C
Derate above 25°C
Total power dissipation upto TC=25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
From junction to ambient
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 30 V
IB = 0; VCE = 60 V
VBE = 0; VCE = VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 30 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 1 A; IB = 0.2 A
Base emitter on voltage
IC = 1 A; VCE = 4 V
D.C. current gain
IC = 0.2 A; VCE = 4 V
IC = 1 A; VCE = 4 V
Small signal current gain
IC = 0.2 A; VCE = 10 V; f = 1 KHz
Transition frequency
IC = 0.2 A; VCE = 10 V; f = 1 MHz
IC max.
ICM max.
IB max.
Ptot max.
max.
Ptot max.
max.
Tj max.
Tstg
Rth j–c
Rth j–a
2.0
4.0
0.6
2.0
0.016
30
0.24
150
–65 to +150
A
A
A
W
W/°C
W
W/°C
°C
ºC
4.167
62.5
°C/W
°C/W
239 239A 239B 239C
240 240A 240B 240C
ICEO
ICEO
ICES
max. 0.3 0.3 – – mA
max. – – 0.3 0.3 mA
max.
0.2
mA
IEBO
max.
1.0
mA
VCEO(sus)* min. 45
VCBO
min. 55
VEBO
min.
60 80 100 V
70 90 115 V
5.0 V
VCEsat* max.
0.7
V
VBE(on)* max.
1.3
V
hFE* min.
hFE* min.
40
15
hfe min.
20
fT (1)
min.
3
MHz
* Pulse test: pulse width 300 µs; duty cycle 2%
(1) fT = |hfe|• ftest
Continental Device India Limited
Data Sheet
Page 2 of 3




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BD239 transistor

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