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CEB05P03 반도체 회로 부품 판매점

P-Channel Enhancement Mode Field Effect Transistor



CET 로고
CET
CEB05P03 데이터시트, 핀배열, 회로
CEP05P03/CEB05P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -18A,RDS(ON) = 70m@VGS = -10V.
RDS(ON) = 120m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-30
±20
-18
-50
47
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.2
62.5
Units
C/W
C/W
2002.May
4 - 22
http://www.cetsemi.com


CEB05P03 데이터시트, 핀배열, 회로
CEP05P03/CEB05P03
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -2A
VDS = -15V, ID = -4.9A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -4.9A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -1.7A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-30
-1
5
Typ
-1.5
42
78
1040
420
150
8
11
23
14
22.5
2
6
-0.79
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
70 m
120 m
S
pF
pF
pF
15 ns
20 ns
40 ns
25 ns
29 nC
nC
nC
-18 A
-1.2 V
4
4 - 23




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CEB05P03 transistor

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CEB05P03

P-Channel Enhancement Mode Field Effect Transistor - CET