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WBP3306 반도체 회로 부품 판매점

NPN Power Transistor



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Winsemi
WBP3306 데이터시트, 핀배열, 회로
WBP3306
High Voltage Fast-Switching NPN Power Transistor
Features
Very high switching speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High
speed switching characteristics required such as
lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collect-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Total Dissipation at Tc=25
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE=0
IB=0
IC=0
(Note)
Value
950
400
12
4
8
70
150
-65~150
Units
V
V
V
A
A
W
Thermal Characteristics
Symbol
Parameter
RӨJC
RӨJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.8
62.5
Units
℃/W
℃/W
Rev.A03 Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.


WBP3306 데이터시트, 핀배열, 회로
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test conditions
ICBO Collector Cut-off Current
VCB=950V, Ie=0A
ICEO Collector Cut-off Current
VCE=400V, IB=0A
BVCBO
Collector-Base Breakdown Voltage Ic=0.5mA
BVCEO
Collector-Emitter Breakdown Voltage Ic=5mA
BVEBO
Emitter-Base Breakdown Voltage
Ie=1mA
VCE(sat)1
Collector -Emitter Saturation Voltage Ic=1A,Ib=0.2A
VCE(sat)2
Collector -Emitter Saturation Voltage Ic=3.5A,Ib=1A
VBE(sat)1
Base -Emitter saturation Voltage
Ic=3.5A,Ib=1A
Vce=5V,Ic=0.1A
hFE
DC Current Gain
Vce=5V,Ic=0.5A
tr Rise Time
tSTG Storage Time
tf Fall Time
Vce=3V,Ic=0.8A
VCC=125V,IC=2A
IB1=-IB2=-0.4A
tP=300uS,VBE(OFF)=-5V
WBP3306
Value
Min Typ Max Units
- - 10 µA
- - 10 µA
950 - - V
400 - - V
12 - - V
- - 0.5 V
- - 1.5 V
- - 1.5 V
35 - 100
35 -
-
25 - 50
- 0.17 2
- -6
- - 0.5
µs
µs
µs
Note:
Pulsed duration=380µs,Duty cycle≤2%
Steady, keep you advance
2/6




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WBP3306 transistor

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