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INCHANGE |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934F/936F/938F/940F/942F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -150mA
·Complement to Type BD933F/935F/937F/939F/941F
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD934F
-45
BD936F
-60
VCBO
Collector-Base Voltage BD938F
-100
V
BD940F
-120
BD942F
-140
BD934F
-45
BD936F
-60
VCEO
Collector-Emitter Voltage BD938F
-80
V
BD940F
-100
BD942F
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-7 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
19
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
4.17 ℃/W
Thermal Resistance,Junction to Ambient 55 ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934F/936F/938F/940F/942F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD934F
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD936F
BD938F IC= 100mA ; IB= 0
BD940F
BD942F
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.1A
VBE(on) Base-Emitter On Voltage
ICBO Collector Cutoff Current
ICEO Collector Cutoff Current
IC= -1A; VCE= -2V
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax; IB= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -150mA ; VCE= -2V
hFE-2
DC Current Gain
IC= -1A ; VCE= -2V
fT Current-Gain—Bandwidth Product IC= -250mA ; VCE= -10V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
MIN TYP. MAX UNIT
45
60
80 V
100
120
-0.6 V
-1.3 V
-0.1
-3.0
mA
-0.5 mA
-1.0 mA
40 250
25
3 MHz
0.2 0.6 μs
0.7 2.4 μs
isc Website:www.iscsemi.cn
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