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PDF BFS17N Data sheet ( Hoja de datos )
| Número de pieza | BFS17N | |
| Descripción | NPN RF TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFS17N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Features
• 3.2GHz unity gain for RF switching applications
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
Applications
• RF switch
A Product Line of
Diodes Incorporated
BFS17N
NPN RF TRANSISTOR IN SOT23
Mechanical Data
• Case: SOT23
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208 e3
• Weight: 0.008 grams (approximate)
SOT23
Top View
C
B
E
Device symbol
E
C
Top View
Pin Out
B
Ordering Information (Notes 4 & 5)
Product
BFS17NTA
BFS17NQTA
Compliance
AEC-Q101
Automotive
Marking
E1N
E1N
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
E1N
E1N = Product type Marking Code
BFS17N
Document Number DS32160 Rev. 3 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
1 page  
A Product Line of
Diodes Incorporated
BFS17N
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
200
150 T=150°C
T=85°C
100
T=25°C
50
T=-55°C
V =5V
CE
0.06 Ten base steps
100μA per step
0.05
0.04
0.03
0.02
0.01
0
0.1 1 10 100
I Collector Current (mA)
C
0.00
0 1 2 3 4 5 6 7 8 9 10
V (V)
CE
1100
1000
900
800
700
600
500
400
0.1
T=25°C
T=-55°C
T=85°C
T=150°C
V =5V
CE
1 10 100
I Collector Current (mA)
C
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.0
Ta=25°C
f=1MHz
0.5 1.0 1.5 2.0 2.5 3.0
V Emitter-Base Voltage (V)
EB
4
V =10V
CE
3
2 V =5V
CE
1
Tamb=25°C
f=500MHz
0
0.0 5.0 10.0
V =1V
CE
15.0 20.0
V =2V
CE
25.0 30.0
I Collector Current (mA)
C
1.4 Ta=25°C
f=1MHz
1.2
1.0
0.8
0.6
0
5 10 15 20
V Collector-Base Voltage (V)
CB
BFS17N
Document Number DS32160 Rev. 3 - 2
5 of 7
www.diodes.com
October 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFS17N.PDF ] | |
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