(PDF) BDX88A Datasheet - Silicon PNP Darlington Power Transistor

Número de pieza	BDX88A
Descripción	Silicon PNP Darlington Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BDX88/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C ·Complement to Type BDX87/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX88 -45 UNIT VCBO Collector-Base Voltage BDX88A BDX88B -60 -80 V BDX88C -100 BDX88 -45 VCEO BDX88A Collector-Emitter Voltage BDX88B -60 -80 V BDX88C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -18 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -200 120 200 mA W ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.45 ℃/W isc website：www.iscsemi.cn 1 1 page

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PDF BDX88A Data sheet ( Hoja de datos )