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BLF2047L-90 반도체 회로 부품 판매점

UHF power LDMOS transistor



Philips 로고
Philips
BLF2047L-90 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2047L/90
UHF power LDMOS transistor
Product specification
Supersedes data of 2000 Feb 17
2000 Mar 06


BLF2047L-90 데이터시트, 핀배열, 회로
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2047L/90
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (1.8 to 2.0 GHz)
Internal input and output matching for high gain and
efficiency.
APPLICATIONS
Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
PINNING
PIN
1
2
3
handbook, halfpage
DESCRIPTION
drain
gate
source, connected to flange
1
23
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
Top view
MBK394
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
PL
Gp
ηD
dim
(V) (W) (dB) (%) (dBc)
Two-tone, class-AB
f1 = 2000; f2 = 2000.1
26 90 (PEP) >10.5 >30 ≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS
VGS
ID
Tstg
Tj
SYMBOL
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
PARAMETER
MIN.
65
MAX.
65
±15
12
+150
200
UNIT
V
V
A
°C
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Mar 06
2




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BLF2047L-90 transistor

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UHF power LDMOS transistor - Philips