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Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2047L/90
UHF power LDMOS transistor
Product specification
Supersedes data of 2000 Feb 17
2000 Mar 06
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2047L/90
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (1.8 to 2.0 GHz)
• Internal input and output matching for high gain and
efficiency.
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
PINNING
PIN
1
2
3
handbook, halfpage
DESCRIPTION
drain
gate
source, connected to flange
1
23
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
Top view
MBK394
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
PL
Gp
ηD
dim
(V) (W) (dB) (%) (dBc)
Two-tone, class-AB
f1 = 2000; f2 = 2000.1
26 90 (PEP) >10.5 >30 ≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS
VGS
ID
Tstg
Tj
SYMBOL
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
PARAMETER
MIN.
−
−
−
−65
−
MAX.
65
±15
12
+150
200
UNIT
V
V
A
°C
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Mar 06
2
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