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BDW46G 반도체 회로 부품 판매점

Darlington Complementary Silicon Power Transistors



ON Semiconductor 로고
ON Semiconductor
BDW46G 데이터시트, 핀배열, 회로
BDW42G (NPN),
BDW46G, BDW47G (PNP)
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min) − BDW46
100 Vdc (min) − BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
3.0 Vdc (max) @ IC = 10.0 Adc
Monolithic Construction with Built−In Base Emitter Shunt resistors
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BDW46
BDW42, BDW47
Collector-Base Voltage
BDW46
BDW42, BDW47
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
80
100
80
100
5.0
15
0.5
85
0.68
−55 to +150
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
RqJC
Max
1.47
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 17
www.onsemi.com
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLT, 85 WATT
4
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
BDWxx
AYWWG
BDWxx =
A=
Y=
WW =
G=
Device Code
x = 42, 46, or 47
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BDW42G
TO−220
(Pb−Free)
50 Units/Rail
BDW46G
BDW47G
TO−220
(Pb−Free)
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
Publication Order Number:
BDW42/D


BDW46G 데이터시트, 핀배열, 회로
BDW42G (NPN), BDW46G, BDW47G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BDW46
BDW42/BDW47
VCEO(sus)
80
100
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
BDW46
BDW42/BDW47
BDW46
BDW42/BDW47
ICEO
ICBO
IEBO
mAdc
− 2.0
− 2.0
mAdc
− 1.0
− 1.0
− 2.0 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
Base−Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
1000
250 −
VCE(sat)
Vdc
2.0
3.0
VBE(on) − 3.0 Vdc
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42
BDW46/BDW47
VCE = 28.4 Vdc
VCE = 40 Vdc
VCE = 22.5 Vdc
VCE = 36 Vdc
IS/b
Adc
3.0 −
1.2 −
3.8 −
1.2 −
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
BDW42
BDW46/BDW47
fT
Cob
4.0 − MHz
pF
− 200
− 300
Small−Signal Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe 300 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
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