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P1003BKA 반도체 회로 부품 판매점

N-Channel Field Effect Transistor



NIKO-SEM 로고
NIKO-SEM
P1003BKA 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
P1003BKA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mΩ
ID
44A
D
G
S
D DDD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
PD
PD
Tj, Tstg
LIMITS
30
±20
44
28
110
12
10
31
12
2.5
1.6
-55 to 150
UNITS
V
V
A
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
Steady-State
RθJA
Junction-to-Case
Steady-State
RθJC
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A
TYPICAL
MAXIMUM
50
4
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
LIMITS
MIN TYP MAX
UNIT
30
1 1.5
3
V
±100 nA
1
µA
10
REV 0.9
Apr-12-2011
1


P1003BKA 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
P1003BKA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
DYNAMIC
11 14.5
mΩ
8.2 9.8
50 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1130
157
116
2.3
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 20A
Qgd
td(on)
tr VDS = 15V ,
td(off)
ID 20A, VGS = 20V, RGEN =6Ω
22
11
3.6
5
17
10
33
nC
nS
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
44 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 30A
15 nS
5 nC
REV 0.9
Apr-12-2011
2




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P1003BKA transistor

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