파트넘버.co.kr P5806NPG 데이터시트 PDF


P5806NPG 반도체 회로 부품 판매점

N- & P-Channel Field Effect Transistor



NIKO-SEM 로고
NIKO-SEM
P5806NPG 데이터시트, 핀배열, 회로
NIKO-SEM
N- & P-Channel Enhancement Mode
P5806NPG
Field Effect Transistor
DIP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 60 58mΩ
P-Channel -60 90mΩ
ID
4.5A
-3.5A
D1 D1 D2 D2
#1S1 G1 S2 G2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
N-Channel P-Channel UNITS
60 -60 V
±20 ±20 V
4.5 -3.5
4 -3 A
20 -20
2
W
1.28
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
62.5
40
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch 60
P-Ch -60
N-Ch 1.0 1.5 2.5
P-Ch -1.0 -1.5 -2.5
V
VDS = 0V, VGS = ±20V
N-Ch
IGSS
VDS = 0V, VGS = ±20V
P-Ch
±100
nA
±100
VDS = 48V, VGS = 0V
N-Ch
1
VDS = -48V, VGS = 0V
P-Ch
IDSS VDS = 40V, VGS = 0V, TJ = 55 °C N-Ch
-1
10 µA
VDS = -40V, VGS = 0V, TJ = 55 °C P-Ch
-10
REV 1.0
Sep-02-2010
1


P5806NPG 데이터시트, 핀배열, 회로
NIKO-SEM
N- & P-Channel Enhancement Mode
P5806NPG
Field Effect Transistor
DIP-8
Halogen-Free & Lead-Free
On-State Drain Current1
ID(ON)
Drain-Source On-State Resistance1
RDS(ON)
Forward Transconductance1
gfs
VDS = 5V, VGS = 10V
VDS =-5V, VGS = -10V
VGS = 4.5V, ID = 4A
VGS = -4.5V, ID = -3A
VGS = 10V, ID = 4.5A
VGS = -10V, ID = -3.5A
VDS = 10V, ID = 4.5A
VDS = -5V, ID = -3.5A
N-Ch 20
P-Ch -20
A
N-Ch
P-Ch
N-Ch
P-Ch
55 85
100 135
mΩ
42 58
70 90
N-Ch
P-Ch
14
9
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
REV 1.0
DYNAMIC
N-Ch
Ciss
N-Channel
P-Ch
VGS = 0V, VDS = 25V, f = 1MHz N-Ch
Coss
P-Channel
P-Ch
VGS = 0V, VDS = -30V, f = 1MHz N-Ch
Crss
P-Ch
Qg
N-Channel
VDS = 0.5V(BR)DSS, VGS = 10V,
N-Ch
P-Ch
ID = 4.5A
N-Ch
Qgs
P-Channel
P-Ch
VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch
Qgd
ID = -3.5A
P-Ch
N-Ch
td(on)
N-Channel
P-Ch
VDD = 30V
N-Ch
tr ID 1A, VGS = 10V, RGEN = 6Ω P-Ch
N-Ch
td(off)
P-Channel
P-Ch
VDD = -30V
N-Ch
tf ID -1A, VGS = -10V, RGEN = 6Ω P-Ch
2
650
630
80
pF
81
35
33
12 16
11 15
2.4
nC
2.1
2.6
2.5
11 20
6 13
8 18
8 18
19 35 nS
17 31
6 15
11 20
Sep-02-2010




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P5806NPG transistor

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P5806NPG

N- & P-Channel Field Effect Transistor - NIKO-SEM