파트넘버.co.kr BC317B 데이터시트 PDF


BC317B 반도체 회로 부품 판매점

NPN SILICON PLANAR EPITAXIAL TRANSISTOR



CDIL 로고
CDIL
BC317B 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BC317/A/B
TO-92
Plastic Package
EBC
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
VALUE
45
50
6.0
150
350
2.8
1.0
8.0
- 55 to +150
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
125
357
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Emitter Voltage
VCES
IC=100µA, VBE=0
Collector Base Voltage
VCBO
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=100µA, IC=0
Collector Cut off Current
ICBO
VCB=20V, IE = 0
Emitter Cut off Current
IEBO
VEB=4V, IC = 0
Base Emitter On Voltage
VBE (on)
IC=2mA, VCE=5V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
VCE (sat)
VBE (sat)
hFE
IC=10mA, VCE=5V
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10µA, VCE=5V
BC317A
BC317B
IC=2mA, VCE=5V
BC317
BC317A
BC317B
MIN
45
50
50
6.0
0.57
40
110
110
200
TYP
0.70
0.85
90
MAX
30
15
0.72
0.77
0.60
450
220
450
BC317_A_B_Rev220103E
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
nA
nA
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 5


BC317B 데이터시트, 핀배열, 회로
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BC317/A/B
TO-92
Plastic Package
EBC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DYNAMIC CHARACTERISTICS
DESCRIPTION
Noise Figure
Output Capacitance
Input Capacitance
Transition Frequency
Voltage Feedback Ratio
Input Impedance
Output Admittance
Small Signal Current Gain
SYMBOL
NF
Cob
Cib
fT
hre
hie
hoe
hfe
TEST CONDITION
IC=200µA, VCE=5V,
RS=2k, f=1KHz,
BW=200Hz
VCB=10V, IE=0,f=1MHz
VEB=0.5V, IC=0,f=1MHz
IC=10mA, VCE=5V
IC=2mA, VCE=5V, f=1KHz
IC=2mA, VCE=5V, f=1KHz
IC=2mA, VCE=5V, f=1KHz
IC=2mA, VCE=5V, f=1KHz
BC317
BC317A
BC317B
MIN
125
125
240
TYP
11.5
280
2
5
20
BC317_A_B_Rev220103E
MAX
6
4
500
260
500
UNITS
dB
pF
pF
MHz
x10 -4
k
µmhos
Continental Device India Limited
Data Sheet
Page 2 of 5




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BC317B transistor

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