PZ0703ETF 반도체 회로 부품 판매점
P-Channel Field Effect Transistor
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 NIKO-SEM |
NIKO-SEM
P-Channel Enhancement
PZ0703ETF
Mode Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ
ID
-55A
Features
• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
• Products Integrated ESD diode with ESD Protected.
Applications
• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications.
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2,3
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100°C
L = 0.1mH
TC = 25 °C
TC = 100°C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
-30
±16
-55
-35
-130
-50
125
41
17
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3Package limitation current is -55A.
TYPICAL
MAXIMUM
3
62.5
UNITS
°C / W
REV1.0
H-1-3
1
NIKO-SEM
P-Channel Enhancement
PZ0703ETF
Mode Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = -250A
VDS = VGS, ID = -250A
-30
-1 -1.6
-3
V
VDS = 0V, VGS = ±16V
±30 uA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
1
10 A
VGS = -4.5V, ID = -20A
VGS = -10V, ID = -20A
7.6 12
mΩ
5 7.5
VDS = -5V, ID = -20A
57 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
4987
1095
Reverse Transfer Capacitance
Crss
1018
Gate resistance
Rg VGS=0V,VDS=0V, f=1MHz
2.4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -15V , VGS= -10V , ID =-20A
VDS = -15V,
ID -20A, VGS = -10V, RGS = 6Ω
128
15
34
32
24
90
44
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -20A, VGS = 0V
-31
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A / S
1Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
2Independent of operating temperature.
3Package limitation current is -55A.
32
21
pF
Ω
nC
nS
A
V
nS
nC
REV1.0
H-1-3
2
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( niko-sem )
PZ0703ETF transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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