|
|
PDF PK5G6EA Data sheet ( Hoja de datos )
| Número de pieza | PK5G6EA | |
| Descripción | N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PK5G6EA (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK5G6EA
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 2.4mΩ
ID
87A
Features
• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
• Products Integrated ESD diode with ESD Protected.
Applications
• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications.
ESD Protected Gate
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current4
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation3
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
20
±12
87
55
120
31
25
51
130
31
12.5
4
2.6
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
REV1.0
1
F-40-5
1 page  
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK5G6EA
PDFN 5x6P
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
0.6 ID=15A
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Safe Operating Area
1000
Source-Drain Diode Forward Voltage
100
150℃
25℃
10
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
Single Pulse Maximum Power Dissipation
120
Operation in This Area
↓100 is Limited by RDS(ON)
Single Pulse
RθJA = 51˚C/W
TA=25˚C
90
10 60
1ms
1
NOTE :
1.VGS= 10V
2.TA=25˚C
3.RθJA = 51˚C/W
4.Single Pulse
0.1
0.01
0.1 1
10
VDS, Drain-To-Source Voltage(V)
10ms
100ms
DC
100
30
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
Transient Thermal Response Curve
10
100
1
Duty cycle=0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
0.001
0.0001
REV1.0
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
5
Notes
1.Duty cycle, D= t1 / t2
2.RthJA = 51 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
10 100
F-40-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PK5G6EA.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PK5G6EA | N-Channel Field Effect Transistor | NIKO-SEM |
| PK5G6EA | N-Channel Enhancement Mode MOSFET |  UNIKC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |