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P1060ETFS 반도체 회로 부품 판매점

N-Channel Field Effect Transistor



NIKO-SEM 로고
NIKO-SEM
P1060ETFS 데이터시트, 핀배열, 회로
NIKO-SEM
N-ChFainenldelEEffnehcatnTcreamnseinsttoMrodeHaPPlo11g00e66n00-FEErTTeFFe:S&T:OTLOe-2a-22d02-FF0rFeSe
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.75Ω
ID
10A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
100% UIS tested
LIMITS
600
±30
10
6
30
3.5
61
39
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 100V , L = 10mH, starting TJ = 25˚C
TYPICAL
MAXIMUM
3.2
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
MIN
LIMITS
TYP MAX
UNIT
600
2 2.9
4
V
±100 nA
F-49-1


P1060ETFS 데이터시트, 핀배열, 회로
NIKO-SEM
N-ChFainenldelEEffnehcatnTcreamnseinsttoMrodeHaPPlo11g00e66n00-FEErTTeFFe:S&T:OTLOe-2a-22d02-FF0rFeSe
Gate Voltage Drain Current
VDS = 600V, VGS = 0V , TC = 25 °C
IDSS
VDS = 480V, VGS = 0V , TC = 100 °C
1
A
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 5A
VDS = 15V, ID = 5A
DYNAMIC
0.57 0.75 Ω
15 S
Input Capacitance
Ciss
1552
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
162
Reverse Transfer Capacitance
Crss
23
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, ID = 10A, VGS = 10V
VDD = 300V, ID = 10A, RG= 25Ω
49
7
20
60
34
220
47
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF =10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 10A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
404
4.7
10
1.5
pF
nC
nS
A
V
nS
uC
REV 1.0
2
F-49-1




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P1060ETFS transistor

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