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PZ2N7002M 반도체 회로 부품 판매점

N-Channel Field Effect Transistor



NIKO-SEM 로고
NIKO-SEM
PZ2N7002M 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Logic Level Enhancement
PZ2N7002M
Mode Field Effect Transistor
SOT-23(S)
Halogen-Free & Lead-Free
Drain
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 2Ω
ID
300mA
Gate
ESD PROTECTION DIODE
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 ° C
TC = 100 ° C
Power Dissipation
TC = 25 ° C
TC = 100 ° C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
60
±20
300
190
1
0.35
0.14
-40 to 150
UNITS
V
V
mA
A
W
°C
MAXIMUM
350
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
MIN
LIMITS
TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
VGS = 0V, ID = 100A
VDS = VGS, ID = 100A
VDS = 0V, VGS = ±16V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VDS = 10V, VGS = 10V
VGS = 3.5V, ID = 10mA
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 200mA
VDS = 20V, ID = 200mA
60
1.0 1.8 2.5
±30
1
10
1
2.1 5
1.7 3
1.6 2
0.18
V
A
A
A
Ω
S
REV 0.93
1
C-40-4


PZ2N7002M 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Logic Level Enhancement
PZ2N7002M
Mode Field Effect Transistor
SOT-23(S)
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 25V, f = 1MHz
36
10 pF
Reverse Transfer Capacitance
Crss
6
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs VDS = 0.5V(BR)DSS, VGS = 10V,
Qgd ID = 200mA
1.6
0.2
1
Turn-On Delay Time2
td(on)
VDD = 30V, ID =200mA, RG=10Ω
30
Turn-Off Delay Time2
td(off)
VGS = 10V
125
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
nC
ns
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF =200mA, VGS = 0V
300 mA
1.2 V
REMARK: ESD Protected Gate, 2KV HBM
REV 0.93
2
C-40-4




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PZ2N7002M transistor

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