EMH3 반도체 회로 부품 판매점
Digital Transistors
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 JCET |
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMH3
Dual Digital Transistors (NPN+NPN)
FEATURES
z Two DTC143T chips in a UMT package
z Transistor elements are independent, eliminating interference
z Mounting cost and area can be cut in half
SOT-563
1
MARKING:H3
Absolute maximum ratings(Ta=25℃)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
PC
Tj
Tstg
Electrical characteristics (Ta=25℃)
Limits
50
50
5
100
150
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
3.29
Typ Max. Unit
Conditions
V Ic=50μA
V Ic=1mA
V
0.5 μA
IE=50μA
VCB=50V
0.5 μA
VEB=4V
0.3 V
IC=5mA,IB=0.25mA
600 VCE=5V,IC=1mA
4.7 6.11 KΩ
250 MHz VCE=10V ,IE=-5mA,f=100MHz
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1
D,Mar,2016
Typical Characteristics
12
10
8
6
4
2
0
0
100
Static Characteristic
50uA
45uA
COMMON
EMITTER
Ta=25℃
40uA
35uA
30uA
25uA
20uA
15uA
10uA
IB=5uA
123456
COLLECTOR-EMITTER VOLTAGE VCE (V)
V ——
BEsat
I
C
1000
100
10
0.1
1
h
FE
——
I
C
Ta=100 oC
Ta=25 oC
1 10
COLLECTOR CURRENT IC (mA)
V —— I
CEsat
C
VCE=5V
100
10
1
0.1
1
100
Ta=25℃
Ta=100℃
10
COLLECTOR CURRENT IC (mA)
I —— V
C BE
β=20
100
0.1
0.01
1
100
10
Ta=100℃
Ta=25℃
1
10
1
0.1
0.1
200
1
BASE-EMMITER VOLTAGE VBE (V)
P —— T
Da
VCE=5V
10
0.1
0.1
150
100
50
0
0
www.cj-elec.com
25 50 75 100
AMBIENT TEMPERATURE Ta (℃)
125
150
2
Ta=100℃
Ta=25℃
10
COLLECTOR CURRENT IC (mA)
C /C
ob ib
——
V /V
CB EB
C
ib
β=20
100
f=1MHz
IE=0/ IC=0
Ta=25 oC
C
ob
1
REVERSE VOLTAGE V (V)
10 20
D,Mar,2016
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EMH3 transistor
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