P1160ZT 반도체 회로 부품 판매점
N-Channel Field Effect Transistor
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 NIKO-SEM |
NIKO-SEM
N-Channel High Voltage Mode
P1160ZT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
390mΩ
ID
11A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
11
7
40
3
180
104
41
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
1.2
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
600
2
3.4 4
V
±100 nA
1
A
100
REV 1.0
1
F-07-3
NIKO-SEM
N-Channel High Voltage Mode
P1160ZT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 5.5A
VDS = 10V, ID = 5.5A
DYNAMIC
343 390 mΩ
8S
Input Capacitance
Ciss
879
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Coss
Crss
Co(er)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0 to 480V
VDD = 480V, ID =5.5A, VGS = 10V
VDD = 300V, ID =5.5A, RG= 10Ω
654
pF
11
50
31
4.4 nC
16
28
67
nS
75
37
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =5.5A, VGS = 0V
11 A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =5.5A, dlF/dt = 100A / S
Qrr
306 nS
3.8 uC
1Pulse test : Pulse Width 380 sec, Duty Cycle 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
REV 1.0
2
F-07-3
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P1160ZT transistor
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국내 전력반도체 판매점
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