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PDF P1610ATF Data sheet ( Hoja de datos )
| Número de pieza | P1610ATF | |
| Descripción | N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
P1610ATF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ
ID
34A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current
Avalanche Energy
Power Dissipation
TC = 25 °C
TC = 100 °C
L = 1mH
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
IAS
EAS
PD
Mounting Torque3
Machine Screw
Operating Junction & Storage Temperature Range
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
34
21
120
12
72
48
19
5
0.49
-55 to 150
UNITS
V
A
mJ
W
Kgf.cm
N.m
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3Not suggest using Self-Tapping screw.
TYPICAL
MAXIMUM
2.6
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
REV 1.1
1
LIMITS
UNIT
MIN TYP MAX
110
2 3.2
4
V
±100 nA
F-46-1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P1610ATF.PDF ] | |
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