파트넘버.co.kr PA410BT 데이터시트 PDF


PA410BT 반도체 회로 부품 판매점

N-Channel Field Effect Transistor



NIKO-SEM 로고
NIKO-SEM
PA410BT 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
PA410BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ
ID
11A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
100
±20
11
6.8
30
9.7
4.7
38
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
3.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V , VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 5A
VGS = 10V , ID = 5A
VDS = 10V, ID = 5A
LIMITS UNIT
MIN TYP MAX
100
1.3 1.9 2.3
V
±100 nA
1
10 A
102 170
mΩ
91 140
13 S
REV 1.0
1
D-31-4


PA410BT 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
PA410BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
335
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
60
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10V
VDS = 50V, ID = 5A
VDS = 50V
ID 5A, VGS = 10V, RGEN =6Ω
26
8.8
1.6
3.8
22
60
30
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 5A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
28
31
11
1.1
pF
nC
nS
A
V
nS
nC
REV 1.0
2
D-31-4




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PA410BT transistor

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