P2610BTF 반도체 회로 부품 판매점
N-Channel Field Effect Transistor
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 NIKO-SEM |
NIKO-SEM
N-Channel Enhancement Mode
P2610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.8mΩ
ID
24A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 0.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
100
±20
24
15
70
11.7
6.9
37.9
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
3.3
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
100
1.3 1.8 2.3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 ° C
1 A
10
VGS = 4.5V, ID = 10A
VGS =10V, ID = 10A
23.3 35
mΩ
19.3 26.8
REV 1.0
1
D-45-5
NIKO-SEM
N-Channel Enhancement Mode
P2610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 5V, ID = 10A
DYNAMIC
50
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1900
149
92
0.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V , ID =10A
VDS = 50V , ID 10A,
VGS = 10V, RGEN =6Ω
41.5
22.4
6
11.6
16
45
47
38
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current
Forward Voltage1
IS
VSD IF = 10A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
IF= 10A, dI/dt=100A/μs
32
36
24
1.2
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
D-45-5
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제조업체: NIKO-SEM
( niko-sem )
P2610BTF transistor
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[ P2610BTF.PDF ]
[ P2610BTF 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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