파트넘버.co.kr P1006BT 데이터시트 PDF


P1006BT 반도체 회로 부품 판매점

N-Channel Field Effect Transistor



NIKO-SEM 로고
NIKO-SEM
P1006BT 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
P1006BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ
ID
61A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 0.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
60
±20
61
39
150
39
77
83
33
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
1.5
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 20A
VGS =10V, ID = 20A
60
1.3
1.7 2.3
±100
1
10
8.2 13
6.8 10
V
nA
A
mΩ
REV 1.0
1
D-45-3


P1006BT 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
P1006BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 10V, ID = 20A
DYNAMIC
60
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1853
224
142
0.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V , ID =20A
VDS = 30V , ID 20A,
VGS = 10V, RGEN =6Ω
42.2
23.1
5.6
12.8
30
29
50
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Package limitation current is 30A
IF= 20A, dI/dt=100A/μs
29
27
61
1.3
S
pF
Ω
nC
nS
A
V
nS
uC
REV 1.0
2
D-45-3




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P1006BT transistor

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