파트넘버.co.kr P2206BTF 데이터시트 PDF


P2206BTF 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



NIKO-SEM 로고
NIKO-SEM
P2206BTF 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
P2206BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ
ID
28A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
60
±20
28
18
100
25
31
39
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
3.2
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V , VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 12A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
LIMITS UNIT
MIN TYP MAX
60
1.3 1.75 2.3
V
±100 nA
1
10 A
21 30
mΩ
18 22.5
47 S
REV 1.0
1
F-06-5


P2206BTF 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
P2206BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1040
133
91
1
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V, ID = 20A
VDS = 30V
ID 20A, VGS = 10V, RGEN =6Ω
25
14
3.2
8.8
39
23
102
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
22
15
28
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
F-06-5




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: NIKO-SEM

( niko-sem )

P2206BTF transistor

데이터시트 다운로드
:

[ P2206BTF.PDF ]

[ P2206BTF 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


P2206BT

N-Channel Enhancement Mode Field Effect Transistor - NIKO-SEM



P2206BT

N-Channel Enhancement Mode MOSFET - UNIKC



P2206BTF

N-Channel Enhancement Mode Field Effect Transistor - NIKO-SEM



P2206BTF

N-Channel Enhancement Mode MOSFET - UNIKC