P1070ETF 반도체 회로 부품 판매점
N-Channel Enhancement Mode Field Effect Transistor
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 NIKO-SEM |
NIKO-SEM
N-Channel Enhancement Mode
P1070ETF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
0.91Ω
ID
10A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2,4
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH, starting TJ = 25˚C.
4This characteristics assumes the die are assembled in TO-220 packages.
1. GATE
2. DRAIN
3. SOURCE
100% UIS tested
LIMITS
700
±30
10
6
30
5
125
27
11
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
2.7
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
LIMITS
UNIT
MIN TYP MAX
700
2 2.8
4
V
±100 nA
G-43-4
NIKO-SEM
N-Channel Enhancement Mode
P1070ETF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Gate Voltage Drain Current
VDS = 700V, VGS = 0V , TC = 25 °C
IDSS
VDS = 560V, VGS = 0V , TC = 100 °C
1
100
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
DYNAMIC
0.77 0.91
13
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
2039
154
8
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 560V, ID = 10A, VGS = 10V
VDD = 350V, ID = 10A, RG= 25Ω
43
8.4
11
38
41
141
73
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF =10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 10A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
423
5.8
10
1.4
A
Ω
S
pF
Ω
nC
nS
A
V
nS
uC
REV 1.0
2
G-43-4
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제조업체: NIKO-SEM
( niko-sem )
P1070ETF transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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