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P1065ETF 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



NIKO-SEM 로고
NIKO-SEM
P1065ETF 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
P1065ETF:TO-220F
P1065ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
0.77Ω
ID
10A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
650
±30
10
6
35
5
125
48
19
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
2.6
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
LIMITS
UNIT
MIN TYP MAX
650
2 2.8
4
V
±100 nA
G-16-2


P1065ETF 데이터시트, 핀배열, 회로
NIKO-SEM
N-Channel Enhancement Mode
P1065ETF:TO-220F
P1065ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
Gate Voltage Drain Current
VDS = 650V, VGS = 0V , TC = 25 °C
IDSS
VDS = 520V, VGS = 0V , TC = 100 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
DYNAMIC
0.55 0.77
18
Input Capacitance
Ciss
2017
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
167
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 520V, ID =10A, VGS = 10V
VDD = 325V, ID =10A, RG= 25Ω
9
44
13
8.5
33
38
136
71
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =10A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
451
5.8
10
1
A
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
G-16-2
2




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P1065ETF transistor

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P1065ETF

N-Channel Enhancement Mode Field Effect Transistor - NIKO-SEM



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N-Channel Enhancement Mode Field Effect Transistor - NIKO-SEM