KTD1145 반도체 회로 부품 판매점
EPITAXIAL PLANAR NPN TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVE, HAMMER DIRVE, LAMP DRIVE.
STROBO, DC-DC CONVERTER, MOTOR DRIVE.
FEATURES
ᴌLow Saturation Voltage.
: VCE(sat)=0.5V(Max.) (IC=3A, IB=60mA).
ᴌHigh Collector Current.
: IC=5A, ICP(Peak Current )=8A.
ᴌWide ASO.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse (Note1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Note 1: Pulse Width⏊100mS, Duty Cycle⏊30%
RATING
60
20
6
5
8
1
150
-55ᴕ150
UNIT
V
V
V
A
W
ᴱ
ᴱ
KTD1145
EPITAXIAL PLANAR NPN TRANSISTOR
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
hFE(1) (Note 1)
hFE(2)
VCE(sat)
fT
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=3A (Pulse)
IC=3A, IB=60mA (Pulse)
VCE=10V, IC=50mA
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note 1 : hFE(1) Classification A:140ᴕ240, B:200ᴕ330, C:300ᴕ450, D:420ᴕ600
MIN.
-
-
140
75
-
-
-
TYP.
-
-
-
-
-
120
27
MAX.
100
100
600
-
0.5
-
-
UNIT
nA
nA
V
MHz
pF
1993. 11. 10
Revision No : 0
1/2
KTD1145
5 50 40
4 30
20
3
I C - V CE
COMMON EMITTER
Ta=25 C
2 10
I B=5mA
1
0
012345
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - VBE
6 COMMON EMITTER
5
VCE =2V
PULSE
4
3
2
1
0
0 0.4 0.8 1.2 1.6
BASE-EMITTER VOLTAGE VBE (V)
2.0
h FE - I C
1k
COMMON EMITTER
500 VCE =2V
3O0
100
50
30
10
0.01
0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
35
VCE(sat) - I C
5
3
COMMON EMITTER
I C/IB =50
(PULSE)
1
0.5
0.3
0.1
0.05
0.03
0.1
0.3 0.5 1
35
COLLECTOR CURRENT I C (A)
10
PC - Ta
1.2k
1k
800
600
400
200
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
1993. 11. 10
Revision No : 0
SAFE OPERATING AREA
10
5
3
1
0.5
0.3
* NSPIUONLNGSRLEEETPaE=TI2CI5TMICVAEX(CONTINUOUS)
** PULSE WIDTH
DUTY CYCLE <=
<= 100mS
30%
0.1
Ta=25 C
CURVES MUST BE DERATED
0.05
LINEARLY WITH INCREASE
IN TEMPERATURE
0.03
0.1 0.3 1
3
**
10
30
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2
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KTD1145 transistor
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