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PDF KTD1351 Data sheet ( Hoja de datos )
| Número de pieza | KTD1351 | |
| Descripción | TRIPLE DIFFUSED NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌLow Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A
ᴌComplementary to KTB988.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25ᴱ
Tc=25ᴱ
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
60
60
7
3
0.5
2.0
30
150
-55ᴕ150
UNIT
V
V
V
A
A
W
ᴱ
ᴱ
KTD1351
TRIPLE DIFFUSED NPN TRANSISTOR
A
R
S
D
T
L
CC
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
fT
Cob
VCB=60V, IE=0
VEB=7V, IC=0
IC=50mA, IB=0
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
Switching Time
Turn-on Time
Storage Time
ton
tstg
20µsec
IB1
INPUT
IB2
IB1
IB2
Fall Time
tf
IB1=-I B2 =0.2A
DUTY CYCLE <= 1%
Note : hFE Classification O:60ᴕ120 , Y:100ᴕ200 , GR:150ᴕ300
OUTPUT
15Ω
VCC =30V
MIN.
-
-
60
60
-
-
-
-
TYP.
-
-
-
-
0.25
0.7
3.0
35
MAX.
100
100
-
300
1.0
1.0
-
-
UNIT
ỌA
ỌA
V
V
V
MHz
pF
- 0.65 -
- 1.3 - ỌS
- 0.65 -
1994. 6. 27
Revision No : 0
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTD1351.PDF ] | |
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