DN200F 반도체 회로 부품 판매점
NPN Silicon Transistor
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 AUK |
Semiconductor
Features
• Extremely low collector-to-emitter saturation voltage
( VCE(SAT)= 0.2V Typ. @IC/IB=1A/50 ㎃)
• Suitable for low voltage large current drivers
• Complementary pair with DP200F
• Switching Application
Ordering Information
Type NO.
DN200F
Marking
N04
Outline Dimensions
DN200F
NPN Silicon Transistor
Package Code
SOT-89
unit : mm
KST-2125-002
PIN Connections
1. Base
2. Collector
3. Emitter
1
DN200F
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
PC*
TJ
Tstg
* : When mounted on 40×40×0.8mm ceramic substate
Ratings
15
12
5
2
0.5
2
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Test Condition
IC=50 ㎂, IE=0
IC=1 ㎃, IB=0
IE=50 ㎂, IC=0
VCB=12V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100 ㎃
VCE=1V, IC=2A
IC=1A, IB=50 ㎃
IC=1A, IB=50 ㎃
VCE=5V, IC=50 ㎃
VCB=10V, IE=0, f=1 ㎒
(Ta=25°C)
Min. Typ. Max. Unit
15 -
12 -
5-
--
--
200 -
40 -
-V
-V
-V
0.1 ㎂
0.1 ㎂
450 -
--
- - 0.3 V
- - 1.2 V
- 260 -
㎒
-5 -㎊
KST-2125-002
2
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: AUK
( auk )
DN200F transistor
데이터시트 다운로드 :
[ DN200F.PDF ]
[ DN200F 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
