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PDF BC857BV Data sheet ( Hoja de datos )
| Número de pieza | BC857BV | |
| Descripción | DUAL TRANSISTOR | |
| Fabricantes | JCET | |
| Logotipo |  |
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
BC857BV DUAL TRANSISTOR (PNP+PNP)
FEATURES
z Epitaxial Die Construction
z Complementary NPN Types Available
(BC847BV)
z Ultra-Small Surface Mount Package
SOT-563
Marking: K5V
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-45
VEBO
IC
Emitter-Base Voltage
Collector Current -Continuous
-5
-0.1
PC
RθJA
TJ
Tstg
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
0.15
833
150
-55 to +150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol Test conditions
V(BR)CBO IC=-10μA,IE=0
V(BR)CEO IC=-10mA,IB=0
V(BR)EBO IE=-1μA,IC=0
ICBO
VCB=-30V,IE=0
hFE VCE=-5V,IC=-2mA
VCE(sat)(1) IC=-10mA,IB=-0.5mA
VCE(sat)(2) IC=-100mA,IB=-5mA
VBE(sat)(1) IC=-10mA,IB=-0.5mA
VBE(sat)(2) IC=-100mA,IB=-5mA
VBE(1) VCE=-5V,IC=-2mA
VBE(2) VCE=-5V,IC=-10mA
fT VCE=-5V,IC=-10mA,f=100MHz
Cob VCB=-10V,IE=0,f=1MHz
NF VCE=-5V,Ic=-0.2mA,
f=1kHZ,Rs=2KΩ,BW=200Hz
Min Typ Max Unit
-50 V
-45 V
-5 V
-15 nA
220 475
-0.1 V
-0.4 V
-0.7 V
-0.9 V
-0.6
-0.75
V
-0.82
V
100 MHz
4.5 pF
10 dB
www.cj-elec.com
1
C,Jul,2015
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BC857BV.PDF ] | |
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