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PDF BC847BV Data sheet ( Hoja de datos )
| Número de pieza | BC847BV | |
| Descripción | DUAL TRANSISTOR | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC847BV (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-563 Plastic-Encapsulate Transistors
BC847BV DUAL TRANSISTOR(NPN+NPN)
SOT-563
FEATURES
z Epitaxial Die Construction
z Complementary PNP Type Available
(BC857BV)
z Ultra-Small Surface Mount Package
Marking: K4V
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
45
VEBO
IC
Emitter-Base Voltage
Collector Current -Continuous
6
0.1
PC
RθJA
TJ
Tstg
Collector Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction Temperature
Storage Temperature
0.15
833
150
-55 to +150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Output capacitance
Noise Figure
Symbol Test conditions Min Typ
V(BR)CBO IC=10μA,IE=0
50
V(BR)CEO IC=10mA,IB=0
45
V(BR)EBO IE=1μA,IC=0
6
ICBO
VCB=30V,IE=0
IEBO
VEB=5V,IC=0
hFE(1) VCE=5V,IC=2mA
200
VCE(sat)
VBE(sat)
VBE
fT
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VCE=5V,IC=2mA
VCE=5V,IC=10mA
VCE=5V,IC=10mA,f=100MHz
700
900
580 660
100
Cob VCB=10V,IE=0,f=1MHz
NF VCE=5V,Rs=2KΩ,
f=1kHz,BW=200Hz
Max Unit
V
V
V
15 nA
100 nA
450
100
mV
300
mV
700
mV
770
MHz
4.5 pF
10 dB
www.cj-elec.com
1
CA,JMuany,2,2001145
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC847BV.PDF ] | |
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